Low- temperature PZT thin-film ferroelectric memories fabricated on SiO2/Si and glass substrates
Low- temperature PZT thin-film ferroelectric memories fabricated on SiO2/Si and glass substrates http://repository.vnu.edu.vn/handle/VNU_123/58325 D.H. Minh., et al. (2016). Low- temperature PZT thin-film ferroelectric memories fabricated on SiO2/Si and glass substrates. VNU Journal of Science: Advanced Materials and Devices, 1(2016), 75-79. In a ferroelectric-gate thin film transistor memory (FGT) type structure, the gate-insulator layer is extremely important for inducing the charge when accumulating or depleting. We concentrated on the application of low-temperature PZTfilms crystallized at 450, 500 and 550 C, instead of at conventional high temperatures ( 600 C). Investigation of the crystalline structure and electrical properties indicated that the PZTfilm, crystallized at 500 C, was suitable for FGT fabrication because of a high (111) orien-tation, large remnant polarization of 38 aC/cm 2 on SiO2/Si substrate and 17.8 aC/cm 2 on glass, and low leakage current of